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Infineon Technologies IPA057N06N3 G
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IPA057N06N3 G
Manufacturers: Infineon Technologies
Qty: 1150
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Description: MOSFET N-CH 60V 60A TO220-3-31
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Product Information:
Packaging:Cut Tape (CT) Alternate Packaging
Series:HEXFETR
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:9.3A (Tc)
Rds On (Max) @ Id, Vgs:15 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250μA
Gate Charge (Qg) @ Vgs:53nC @ 10V
Input Capacitance (Ciss) @ Vds:1510pF @ 25V
Power - Max:2.5W
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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